Quantum spin field effect transistor

Baigeng Wang, Jian Wang, and Hong Guo
Phys. Rev. B 67, 092408 – Published 31 March 2003
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Abstract

We propose, theoretically, a type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. This spin field effect transistor (SFET) is constructed without magnetic material, but with the help of a spin flip mechanism provided by a rotating external magnetic field. The SFET generates a constant instantaneous spin current that is sensitively controllable by a gate voltage as well as by the frequency and strength of the rotating field. The characteristics of a carbon nanotube based SFET is provided as an example.

  • Received 18 December 2002

DOI:https://doi.org/10.1103/PhysRevB.67.092408

©2003 American Physical Society

Authors & Affiliations

Baigeng Wang1, Jian Wang1,2, and Hong Guo3

  • 1Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
  • 2Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, Anhui, China
  • 3Department of Physics, McGill University, Montreal, Quebec, Canada H3A 2T8

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Vol. 67, Iss. 9 — 1 March 2003

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