Abstract
The usefulness of semiconductor heterostructures derives from the possibility to engineer their electronic and optical properties to match the requirements of many different applications. Optically detected nuclear magnetic resonance provides the possibility to map microscopic properties of such samples with a high spatial resolution through the splitting of resonance lines. In a multiple quantum-well sample, we measure the distortion of the crystal lattice and find variations of the order of over distances of a few mm. Internal electric fields also cause resonance line splittings. Comparing the electric field-induced resonance line splittings in different quantum wells, we mapped the vertical variation of the electric field from a Schottky contact with a spatial resolution of some 40 nm.
- Received 20 August 2002
DOI:https://doi.org/10.1103/PhysRevB.67.085308
©2003 American Physical Society