Effect of an external magnetic field on electron-spin dephasing induced by hyperfine interaction in quantum dots

Y. G. Semenov and K. W. Kim
Phys. Rev. B 67, 073301 – Published 12 February 2003
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Abstract

We investigate the influence of an external magnetic field on spin-phase relaxation of single electrons in semiconductor quantum dots induced by the hyperfine interaction. The basic decay mechanism is attributed to the dispersion of local effective nuclear fields over the ensemble of quantum dots. The characteristics of electron-spin dephasing are analyzed by taking an average over the nuclear-spin distribution. We find that the dephasing rate can be estimated as a spin-precession frequency caused primarily by the mean value of the local nuclear magnetic field. Furthermore, it is shown that the hyperfine interaction does not fully depolarize electron spin. The loss of initial spin polarization during the dephasing process depends strongly on the external magnetic field, leading to the possibility of effective suppression of this mechanism.

  • Received 15 October 2002

DOI:https://doi.org/10.1103/PhysRevB.67.073301

©2003 American Physical Society

Authors & Affiliations

Y. G. Semenov

  • Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki, 45 Kiev 03028 Ukraine

K. W. Kim

  • Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911

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Issue

Vol. 67, Iss. 7 — 15 February 2003

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