Full-frequency voltage noise spectral density of a single-electron transistor

Andreas Käck, Göran Wendin, and Göran Johansson
Phys. Rev. B 67, 035301 – Published 6 January 2003
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Abstract

We calculate the full-frequency spectral density of voltage fluctuations in a single-electron transistor (SET), used as an electrometer biased above the Coulomb threshold so that the current through the SET is carried by sequential tunneling events. We consider both a normal-state SET and a superconducting SET. The whole spectrum, from low-frequency telegraph noise to quantum noise at frequencies comparable to the SET charging energy (EC/ħ) to high-frequency Nyquist noise, is described. We take the energy exchange between the SET and the measured system into account using a real-time diagrammatic Keldysh technique. The voltage fluctuations determine the backaction of the SET on the measured system, and we specifically discuss the case of superconducting charge qubit read-out and measuring the so-called Coulomb staircase of a single Cooper-pair box.

  • Received 6 October 2002

DOI:https://doi.org/10.1103/PhysRevB.67.035301

©2003 American Physical Society

Authors & Affiliations

Andreas Käck and Göran Wendin

  • Microtechnology Center at Chalmers MC2, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96, Göteborg, Sweden

Göran Johansson

  • Institut für Theoretische Festkörperphysik, Universität Karlsruhe, D-761 28 Karlsruhe, Germany

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Vol. 67, Iss. 3 — 15 January 2003

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