Evidence for transfer of polarization in a quantum dot cellular automata cell consisting of semiconductor quantum dots

S. Gardelis, C. G. Smith, J. Cooper, D. A. Ritchie, E. H. Linfield, and Y. Jin
Phys. Rev. B 67, 033302 – Published 16 January 2003
PDFExport Citation

Abstract

We present evidence for quantum dot cellular automata action in a cell consisting of four dots defined by submicron metal gates on the top surface of a molecular-beam-epitaxy-grown GaAs/AlGaAs heterostructure in which a two-dimensional electron gas layer was formed approximately 70 nm below the surface. The four-dot cell is separated by a strong barrier in two double-dot sets. We show that by polarizing one of the double-dot sets we can polarize the other set in the cell. The polarization is detected using noninvasive voltage probe without drawing electric currents from the cell.

  • Received 6 September 2002

DOI:https://doi.org/10.1103/PhysRevB.67.033302

©2003 American Physical Society

Authors & Affiliations

S. Gardelis1,*, C. G. Smith1, J. Cooper1, D. A. Ritchie1, E. H. Linfield1, and Y. Jin2

  • 1Cavendish Laboratory, Madingley Road, Cambridge CB3 OHE, United Kingdom
  • 2Laboratoire des Nanostructures et Photoniques, CNRS, Avenue Henri Ravera, 92222 Bagneux, France

  • *Electronic address: garspiro@iesl.forth.gr

References (Subscription Required)

Click to Expand
Issue

Vol. 67, Iss. 3 — 15 January 2003

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×