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Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot

B. Hackens, F. Delfosse, S. Faniel, C. Gustin, H. Boutry, X. Wallart, S. Bollaert, A. Cappy, and V. Bayot
Phys. Rev. B 66, 241305(R) – Published 19 December 2002
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Abstract

We measure the electron phase-coherence time τφ up to 18 K using universal fluctuations in the low-temperature magnetoconductance of an open InGaAs quantum dot. The temperature dependence of τφ is quantitatively consistent with the two-dimensional model of electron-electron interactions in disordered systems. In our sample, τφ is two to four times larger than previously reported in GaAs quantum dots. We attribute this enhancement to a larger value of the Fermi energy and the lower electron effective mass in our sample. We also observe a distinct type of conductance fluctuation due to ballistic electron focusing inside the dot up to 204 K.

  • Received 4 October 2002

DOI:https://doi.org/10.1103/PhysRevB.66.241305

©2002 American Physical Society

Authors & Affiliations

B. Hackens1, F. Delfosse1, S. Faniel1, C. Gustin1, H. Boutry1, X. Wallart2, S. Bollaert2, A. Cappy2, and V. Bayot1

  • 1CERMIN, PCPM, and DICE Labs, Université Catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
  • 2IEMN, Cité Scientifique, Villeneuve d’Ascq, France

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Vol. 66, Iss. 24 — 15 December 2002

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