Effects of the narrow band gap on the properties of InN

J. Wu; W. Walukiewicz; W. Shan; K. M. Yu; J. W. Ager, III; E. E. Haller; Hai Lu; William J. Schaff

doi:10.1103/PhysRevB.66.201403

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Effects of the narrow band gap on the properties of InN

J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager, III, E. E. Haller, Hai Lu, and William J. Schaff

Phys. Rev. B 66, 201403(R) – Published 27 November 2002

Abstract

Infrared reflection experiments were performed on wurtzite InN films with a range of free-electron concentrations grown by molecular-beam epitaxy. Measurements of the plasma edge frequencies were used to determine electron effective masses. The results show a pronounced increase in the electron effective mass with increasing electron concentration, indicating a nonparabolic conduction band in InN. We have also found a large Burstein-Moss shift of the fundamental band gap. The observed effects are quantitatively described by the $k \cdot p$ interaction within the two-band Kane model of narrow-gap semiconductors.

Received 12 September 2002

DOI:https://doi.org/10.1103/PhysRevB.66.201403

Authors & Affiliations

J. Wu^1,2, W. Walukiewicz^2,*, W. Shan², K. M. Yu², J. W. Ager, III², E. E. Haller^2,3, Hai Lu⁴, and William J. Schaff⁴

¹Applied Science and Technology Graduate Group, University of California, Berkeley, California 94720
²Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
³Department of Materials Science and Engineering, University of California, Berkeley, California 94720
⁴Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853

^*Electronic address: w_walukiewicz@lbl.gov

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Vol. 66, Iss. 20 — 15 November 2002

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