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Ultrahigh field electron cyclotron resonance absorption in In1xMnxAs films

M. A. Zudov, J. Kono, Y. H. Matsuda, T. Ikaida, N. Miura, H. Munekata, G. D. Sanders, Y. Sun, and C. J. Stanton
Phys. Rev. B 66, 161307(R) – Published 8 October 2002
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Abstract

We have carried out an ultrahigh-field cyclotron resonance study of n-type In1xMnxAs films, with Mn composition x ranging from 0% to 12%, grown on GaAs by low-temperature molecular-beam epitaxy. We observe that the electron cyclotron resonance peak shifts to lower field with increasing x. A detailed comparison of experimental results with calculations based on a modified Pidgeon-Brown model allows us to estimate the sd and pd exchange-coupling constants, α and β, for this important III-V dilute magnetic semiconductor system.

  • Received 3 July 2002

DOI:https://doi.org/10.1103/PhysRevB.66.161307

©2002 American Physical Society

Authors & Affiliations

M. A. Zudov* and J. Kono

  • Department of Electrical and Computer Engineering, Rice Quantum Institute
  • Center for Nanoscale Science and Technology, Rice University, Houston, Texas 77005

Y. H. Matsuda, T. Ikaida, and N. Miura

  • Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan

H. Munekata

  • Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503, Japan

G. D. Sanders, Y. Sun, and C. J. Stanton

  • Department of Physics, University of Florida, Gainesville, Florida 32611

  • *Present address: Physics Department, University of Utah, Salt Lake City, Utah 84112.
  • To whom correspondence should be addressed. Electronic address: kono@rice.edu; http://www.ece.rice.edu/∼kono
  • Present address: Department of Physics, Faculty of Science, Okayama University, Okayama, Japan.

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Vol. 66, Iss. 16 — 15 October 2002

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