Abstract
We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a nonmonotonic behavior of the Fanofactor with an average value of consistent with the asymmetry of the tunneling barriers. Reproducible fluctuations observed in can be attributed to the successive participation of more and more InAs quantum dots in the tunneling current.
- Received 10 July 2002
DOI:https://doi.org/10.1103/PhysRevB.66.161303
©2002 American Physical Society