Spin properties of quantum wells with magnetic barriers. II. Inverted band ordering and spin polarized interface states

N. Malkova and U. Ekenberg
Phys. Rev. B 66, 155325 – Published 29 October 2002
PDFExport Citation

Abstract

The electronic band-edge spectrum of the interface states in the magnetic semiconductor quantum wells based on narrow-gap semiconductors with mutually inverted band arrangement is studied within the envelope-function formalism. Interface states are shown to appear in these structures in the case of overlapping bulk bands of the constituents. The hybridization between the bare sp-electron states and the d states of the Mn atoms leads to spin splitting. The spin-splitting effect of the interface states as a function of external magnetic field, well width, band offsets, and fraction of the magnetic atoms, is studied. One essential result is that one can design a structure where the states localized at the interfaces only have one spin direction. The results give evidence of the perspective for using the magnetic semiconductor structures in spin electronics.

  • Received 4 May 2001

DOI:https://doi.org/10.1103/PhysRevB.66.155325

©2002 American Physical Society

Authors & Affiliations

N. Malkova

  • Institute of Applied Physics, AS of Moldova, 2028 Kishinev, Moldova, and Department of Microelectronics and Information Technology, Royal Institute of Technology, SE-164 40 Kista, Sweden

U. Ekenberg

  • Department of Microelectronics and Information Technology, Royal Institute of Technology, SE-164 40 Kista, Sweden

References (Subscription Required)

Click to Expand
Issue

Vol. 66, Iss. 15 — 15 October 2002

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×