Raman spectra of a two-dimensional electron gas in narrow-gap semiconductor quantum wells in magnetic fields: Spin-flip and anisotropic effects

V. López-Richard, G.-Q. Hai, C. Trallero-Giner, and G. E. Marques
Phys. Rev. B 66, 155303 – Published 2 October 2002
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Abstract

The effects of the interband coupling on the magnetoplasmons and the single-particle excitations are studied for a two-dimensional electron gas in narrow-gap semiconductor quantum wells. Raman selection rules and scattering configurations for the observation of the spin-flip transitions in the magneto-Raman scattering are achieved. Our results reveal an unambiguous relation between the conduction band structure and the Raman-scattering spectrum in narrow-gap semiconductor quantum wells. The electron cyclotron mass and the effective Landé g factor can be directly determined from the dependence of the magneto-Raman spectrum on the filling factor in the Faraday and the Voigt configurations, respectively.

  • Received 8 January 2002

DOI:https://doi.org/10.1103/PhysRevB.66.155303

©2002 American Physical Society

Authors & Affiliations

V. López-Richard and G.-Q. Hai

  • Instituto de Física de São Carlos, Universidade de São Paulo, 13560-970, São Carlos, SP, Brazil

C. Trallero-Giner

  • Department of Theoretical Physics, Havana University, San Lazaro y L, 10400 Havana, Cuba

G. E. Marques

  • Departamento de Física, Universidade Federal de São Carlos, 13565-905, São Carlos, SP, Brazil

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Issue

Vol. 66, Iss. 15 — 15 October 2002

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