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Picosecond nonlinear relaxation of photoinjected carriers in a single GaAs/Al0.3Ga0.7As quantum dot

T. Kuroda, S. Sanguinetti, M. Gurioli, K. Watanabe, F. Minami, and N. Koguchi
Phys. Rev. B 66, 121302(R) – Published 6 September 2002
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Abstract

Photoemission from a single self-organized GaAs/Al0.3Ga0.7As quantum dot (QD) is temporally resolved with picosecond time resolution. The emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the excitation intensity. Quantitative agreement is found between the experimental data and the calculation based on a model which characterizes the successive relaxation of multiexcitons. Through the analysis we can determine the carrier relaxation time as a function of population of photoinjected carriers. Enhancement of the intradot carrier relaxation is demonstrated to be due to the carrier-carrier scattering inside a single QD.

  • Received 12 April 2002

DOI:https://doi.org/10.1103/PhysRevB.66.121302

©2002 American Physical Society

Authors & Affiliations

T. Kuroda1, S. Sanguinetti2,3, M. Gurioli2, K. Watanabe3, F. Minami1, and N. Koguchi3

  • 1Department of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551, Japan
  • 2I.N.F.M. and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 53, 20125 Milano, Italy
  • 3Nanomaterials Laboratory, National Institute for Material Science, 1-2-1 Sengen, Tsukuba 305-0047, Japan

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Vol. 66, Iss. 12 — 15 September 2002

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