Si(111) step fluctuations at high temperature: Anomalous step-step repulsion

Saul D. Cohen, Robert D. Schroll, T. L. Einstein, J.-J. Métois, Hailu Gebremariam, Howard L. Richards, and Ellen D. Williams
Phys. Rev. B 66, 115310 – Published 12 September 2002
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Abstract

Using reflection electron microscopy we examine the step fluctuations of Si(111) at 1100°C. Evaporation is compensated by a replenishing flux. The step fluctuation behavior is qualitatively similar to that at 900°C (where sublimation is negligible), with unexplained quantitative differences. We focus on the three parameters of the step continuum model of vicinals. The step stiffness scales with an increase in T from 900°C as predicted by an appropriate lattice model. The kinetic coefficient is larger than scaling of the parameters from 900°C would predict. The step-step correlations are assessed in traditional and novel ways; step repulsions are at least 6 times as strong as predicted from lower temperatures, suggesting nonequilibrium effects probably due to electromigration.

  • Received 18 March 2002

DOI:https://doi.org/10.1103/PhysRevB.66.115310

©2002 American Physical Society

Authors & Affiliations

Saul D. Cohen1,*, Robert D. Schroll1, T. L. Einstein1, J.-J. Métois2, Hailu Gebremariam1, Howard L. Richards1, and Ellen D. Williams1,†

  • 1Department of Physics, University of Maryland, College Park, Maryland 20742-4111
  • 2CRMC2-CNRS, Campus Luminy, Case 913, F-13288 Marseille Cedex 9, France

  • *Present address: Dept. of Physics, Columbia University, New York, NY 10027.
  • Permanent address: Dept. of Physics, Texas A&M University– Commerce, Commerce, TX 75429-3011.

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Vol. 66, Iss. 11 — 15 September 2002

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