Tunneling current through a quantum dot with strong electron-phonon interaction

The tunneling current through a quantum dot(QD) in the presence of local electron-phonon interaction (EPI) and intradot Coulomb repulsion is studied theoretically for arbitrary strength of EPI. It is found that the renormalization of the intradot Coulomb repulsion and QD level position leads to intriguing effects on the tunneling current. The interplay of Coulomb blockade and phonon-assisted tunneling processes gives rise to a rich variety of tunneling current behavior.