Enhancing $T_c$ in field-doped fullerenes by applying uniaxial stress

Capitalizing on the two-dimensional nature of superconductivity in field-effect doped ${\mathrm{C}}_{60},$ we show that it should be possible to increase the transition temperature $T_c$ by applying uniaxial stress perpendicular to the gate electrode. This method not only holds the promise of substantially enhancing $T_c$ (by about 30 K per GPa), but also provides a sensitive check of the current understanding of superconductivity in the doped fullerenes.