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Rabi oscillations in the excitonic ground-state transition of InGaAs quantum dots

P. Borri, W. Langbein, S. Schneider, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg
Phys. Rev. B 66, 081306(R) – Published 15 August 2002
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Abstract

We present measurements and calculations of optical Rabi oscillations in the excitonic ground-state transition of an InGaAs quantum dot ensemble at low temperature. Rabi oscillations which are damped versus pulse area and change period when changing pulse duration are observed. Comparisons with calculations show that the observed damping is not intrinsic to a single dot. Dephasing processes and the biexciton resonance change the amplitude and the period of the oscillations, respectively, while the damping versus pulse area is due to a distribution of transition dipole moments in the ensemble.

  • Received 19 April 2002

DOI:https://doi.org/10.1103/PhysRevB.66.081306

©2002 American Physical Society

Authors & Affiliations

P. Borri, W. Langbein, S. Schneider, and U. Woggon

  • Experimentelle Physik IIb, Universität Dortmund, Otto-Hahn Strasse 4, D-44221 Dortmund, Germany

R. L. Sellin, D. Ouyang, and D. Bimberg

  • Institut für Festkörperphysik TU, Hardenbergstrasse 36, D-10623 Berlin, Germany

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Issue

Vol. 66, Iss. 8 — 15 August 2002

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