Abstract
By application of external electric field, we demonstrate the ability to controllably manipulate the homogenous linewidth of exciton transitions in a single self-assembled In(Ga)As quantum dot (QD). Complementary emission (photoluminescence) and absorption (photocurrent) measurements are used to probe directly the competing processes of radiative recombination and carrier tunnelling escape from the dot. At high electric fields the exciton line shape is lifetime (homogenously) broadened with mesoscopic broadening effects arising from coupling of the QD to its electrostatic environment determining the low field line shape.
- Received 29 December 2001
DOI:https://doi.org/10.1103/PhysRevB.66.045313
©2002 American Physical Society