Manipulation of the homogeneous linewidth of an individual In(Ga)As quantum dot

R. Oulton, J. J. Finley, A. D. Ashmore, I. S. Gregory, D. J. Mowbray, M. S. Skolnick, M. J. Steer, San-Lin Liew, M. A. Migliorato, and A. J. Cullis
Phys. Rev. B 66, 045313 – Published 22 July 2002
PDFExport Citation

Abstract

By application of external electric field, we demonstrate the ability to controllably manipulate the homogenous linewidth of exciton transitions in a single self-assembled In(Ga)As quantum dot (QD). Complementary emission (photoluminescence) and absorption (photocurrent) measurements are used to probe directly the competing processes of radiative recombination and carrier tunnelling escape from the dot. At high electric fields (100kV/cm) the exciton line shape is lifetime (homogenously) broadened with mesoscopic broadening effects arising from coupling of the QD to its electrostatic environment determining the low field line shape.

  • Received 29 December 2001

DOI:https://doi.org/10.1103/PhysRevB.66.045313

©2002 American Physical Society

Authors & Affiliations

R. Oulton, J. J. Finley, A. D. Ashmore, I. S. Gregory, D. J. Mowbray, and M. S. Skolnick

  • Department of Physics and Astronomy, The University of Sheffield, Sheffield, S3 7RH, United Kingdom

M. J. Steer, San-Lin Liew, M. A. Migliorato, and A. J. Cullis

  • Department of Electronic and Electrical Enginering, Mappin Street, Sheffield, S1 3JD, United Kingdom

References (Subscription Required)

Click to Expand
Issue

Vol. 66, Iss. 4 — 15 July 2002

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×