Thermopower of a single-electron transistor in the regime of strong inelastic cotunneling

K. A. Matveev and A. V. Andreev
Phys. Rev. B 66, 045301 – Published 9 July 2002
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Abstract

We study Coulomb blockade oscillations of thermoelectric coefficients of a single-electron transistor based on a quantum dot strongly coupled to one of the leads by a quantum point contact. At temperatures below the charging energy EC the transport of electrons is dominated by strong inelastic cotunneling. In this regime we find analytic expressions for the thermopower as a function of temperature T and the reflection amplitude r in the contact. In the case when the electron spins are polarized by a strong external magnetic field, the thermopower shows sinusoidal oscillations as a function of the gate voltage with the amplitude of the order of e1|r|(T/EC). We obtain qualitatively different results in the absence of the magnetic field. At temperatures between EC and EC|r|2 the thermopower oscillations are sinusoidal with the amplitude of order e1|r|2ln(EC/T). On the other hand, at TEC|r|2 we find nonsinusoidal oscillations of the thermopower with the amplitude e1|r|T/ECln(EC/T).

  • Received 10 January 2002

DOI:https://doi.org/10.1103/PhysRevB.66.045301

©2002 American Physical Society

Authors & Affiliations

K. A. Matveev1 and A. V. Andreev2,3

  • 1Department of Physics, Duke University, Box 90305, Durham, North Carolina 27708
  • 2Department of Physics, University of Colorado, CB 390, Boulder, Colorado 80309
  • 3Bell Labs, Lucent Technologies, 600 Mountain Ave., Murray Hill, New Jersey 07974

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Vol. 66, Iss. 4 — 15 July 2002

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