Memory effect in the deposition of C20 fullerenes on a diamond surface

A. J. Du, Z. Y. Pan, Y. K. Ho, Z. Huang, and Z. X. Zhang
Phys. Rev. B 66, 035405 – Published 9 July 2002
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Abstract

In this paper, the deposition of C20 fullerenes on a diamond (001)(2×1) surface and the fabrication of C20 thin film at 100 K were investigated by a molecular dynamics (MD) simulation using the many-body Brenner bond order potential. First, we found that the collision dynamic of a single C20 fullerene on a diamond surface was strongly dependent on its impact energy. Within the energy range 10–45 eV, the C20 fullerene chemisorbed on the surface retained its free cage structure. This is consistent with the experimental observation, where it was called the memory effect in C20-type” films [P. Melion et al., Int. J. Mod. B 9, 339 (1995); P. Milani et al., Cluster Beam Synthesis of Nanostructured Materials (Springer, Berlin, 1999)]. Next, more than one hundred C20 (10–25 eV) were deposited one after the other onto the surface. The initial growth stage of C20 thin film was observed to be in the three-dimensional island mode. The randomly deposited C20 fullerenes stacked on diamond surface and acted as building blocks forming a polymerlike structure. The assembled film was also highly porous due to cluster-cluster interaction. The bond angle distribution and the neighbor-atom-number distribution of the film presented a well-defined local order, which is of sp3 hybridization character, the same as that of a free C20 cage. These simulation results are again in good agreement with the experimental observation. Finally, the deposited C20 film showed high stability even when the temperature was raised up to 1500 K.

  • Received 10 September 2001

DOI:https://doi.org/10.1103/PhysRevB.66.035405

©2002 American Physical Society

Authors & Affiliations

A. J. Du1, Z. Y. Pan1,2,*, Y. K. Ho1, Z. Huang1, and Z. X. Zhang1

  • 1State Key Laboratory for Material Modification by Laser, Ion and Electron Beams, Institute of Modern Physics, Fudan University, Shanghai 200433, China
  • 2Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shanghai 20050, China

  • *Email address: hoyk@fudan.ac.cn or zypan@fudan.ac.cn

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Vol. 66, Iss. 3 — 15 July 2002

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