Abstract
We have studied the effects of an external electric field on photoluminescence spectra and carrier lifetimes in strained quantum wells embedded in light-emitting diode (LED) structures. Two sample structures with for blue LED’s and 0.2 for green LED’s have been investigated, with increasing reverse bias up to From spectrum-resolved photoluminescence, we observed region of blueshift and redshift in photoluminescence peak energies. From the energy shift, the strength of piezoelectric field was estimated to be Within our bias range, we observed three orders and one order of magnitude changes in carrier lifetime, for blue and green LED’s, respectively. These time-domain results are explained by escape tunneling and thermionic emission, together with carrier recombination which depends on the electron-hole wave function overlap change.
- Received 21 November 2001
DOI:https://doi.org/10.1103/PhysRevB.66.035334
©2002 American Physical Society