Electronic states and optical properties of V-shaped AlGaAs/GaAs quantum wire superlattices

Xue-Lun Wang, Xing-Quan Liu, Mutsuo Ogura, Thierry Guillet, Valia Voliotis, and Roger Grousson
Phys. Rev. B 66, 035319 – Published 18 July 2002
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Abstract

The influence of local disorders in growth direction generated in the initial growth stage of V-shaped AlGaAs/GaAs quantum wire superlattices (QWR-SL’s) on their electronic states and optical properties is investigated by means of photoluminescence, microphotoluminescence, and time-resolved photoluminescence measurements. It is found that localized states induced in the first several superlattice periods by local disorders dominate the luminescence processes of the superlattice structures. These results provide useful information toward the observation of intrinsic optical effects related to a real one-dimensional QWR-SL.

  • Received 12 July 2001

DOI:https://doi.org/10.1103/PhysRevB.66.035319

©2002 American Physical Society

Authors & Affiliations

Xue-Lun Wang*, Xing-Quan Liu, and Mutsuo Ogura

  • Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba 305-8568, Japan
  • CREST-Japan Science and Technology Corporation, 4-1-8 Honcho, Kawaguchi 332-0012, Japan

Thierry Guillet

  • Groupe de Physique des Solides, CNRS, Universités Pierre et Marie Curie et Denis Diderot, 2 place Jussieu, F-75251 Paris Cedex 05, France

Valia Voliotis

  • Groupe de Physique des Solides, CNRS, Universités Pierre et Marie Curie et Denis Diderot, 2 place Jussieu, F-75251 Paris Cedex 05, France
  • Université Evry-Val d’Essonne, boulevard Francois Mitterand, 91025 Evry Cedex, France

Roger Grousson

  • Groupe de Physique des Solides, CNRS, Universités Pierre et Marie Curie et Denis Diderot, 2 place Jussieu, F-75251 Paris Cedex 05, France

  • *Present address: Department of Electrical Engineering, Yale University, 15 Prospect Street, Becton Center, New Haven, CT 06520.

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Issue

Vol. 66, Iss. 3 — 15 July 2002

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