Abstract
We use low temperature near-field optical spectroscopy to image the electron density distribution in the plane of a high mobility GaAs quantum well. We find that the electrons are not randomly distributed in the plane, but rather form narrow stripes (width smaller than 150 nm) of higher electron density. The stripes are oriented along the crystal direction, and are arranged in a quasi-periodic structure. We show that elongated structural mounds, which are intrinsic to molecular beam epitaxy, are responsible for the creation of this electron density texture.
- Received 17 February 2002
DOI:https://doi.org/10.1103/PhysRevB.66.033310
©2002 American Physical Society