Transport in molecular transistors: Symmetry effects and nonlinearities

S. N. Rashkeev, M. Di Ventra, and S. T. Pantelides
Phys. Rev. B 66, 033301 – Published 16 July 2002
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Abstract

We report first-principles calculations of the current-voltage and current-gate-field characteristics of model molecular transistors to explore the factors that control current amplification and other properties. We show that both the position and amplitude of resonant peaks are modified by the use of substituents that affect the symmetry and dipole moments of the molecules, and allow a linear versus nonlinear Stark effect. In addition, strong nonlinearities arise at large source-drain currents.

  • Received 29 April 2002

DOI:https://doi.org/10.1103/PhysRevB.66.033301

©2002 American Physical Society

Authors & Affiliations

S. N. Rashkeev1, M. Di Ventra2, and S. T. Pantelides1,3

  • 1Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235
  • 2Department of Physics, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0435
  • 3Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831

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Vol. 66, Iss. 3 — 15 July 2002

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