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Ballistic magnetoresistance over 3000% in Ni nanocontacts at room temperature

Harsh Deep Chopra and Susan Z. Hua
Phys. Rev. B 66, 020403(R) – Published 26 June 2002
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Abstract

This paper reports ballistic magnetoresistance (BMR) measurements in Ni nanocontacts made by electrodeposition. BMR in excess of 3000% is observed at room temperature and the observed large values of BMR are obtained in switching fields of only a few hundred oersteds. The results are attributed to spin-dependent electron transport across nanometer sharp domain walls within the nanocontacts.

  • Received 30 April 2002

DOI:https://doi.org/10.1103/PhysRevB.66.020403

©2002 American Physical Society

Authors & Affiliations

Harsh Deep Chopra* and Susan Z. Hua

  • Thin Films & Nanosynthesis Laboratory, Materials Program, Mechanical & Aerospace Engineering Department, State University of New York at Buffalo, Buffalo, New York 14260

  • *Corresponding author. Email address: hchopra@eng.buffalo.edu

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Vol. 66, Iss. 2 — 1 July 2002

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