Spin accumulation in ferromagnetic single-electron transistors in the cotunneling regime

Jan Martinek, Józef Barnaś, Sadamichi Maekawa, Herbert Schoeller, and Gerd Schön
Phys. Rev. B 66, 014402 – Published 20 June 2002
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Abstract

We propose a method of direct detection of spin accumulation, which overcomes problems of previous measurement schemes. A spin-dependent current in a single-electron transistor with ferromagnetic electrodes leads to spin accumulation on the metallic island. The resulting spin splitting of the electrochemical potentials of the island, because of an additional shift by the charging energy, can be detected from the spacing between two resonances in the current-voltage characteristics. The results were obtained in the framework of a real-time diagrammatic approach which allows us to study higher-order (co)tunneling processes in the strong nonequlibrium situation.

  • Received 8 April 2002

DOI:https://doi.org/10.1103/PhysRevB.66.014402

©2002 American Physical Society

Authors & Affiliations

Jan Martinek1,2, Józef Barnaś1,3, Sadamichi Maekawa2, Herbert Schoeller4,5, and Gerd Schön4,6

  • 1Institute of Molecular Physics, Polish Academy of Sciences, ul. Smoluchowskiego 17, 60-179 Poznań, Poland
  • 2Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • 3Department of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań, Poland
  • 4Forschungszentrum Karlsruhe, Institut für Nanotechnologie, 76021 Karlsruhe, Germany
  • 5Institut für Theoretische Physik A, RWTH Aachen, 52056 Aachen, Germany
  • 6Institut für Theoretische Festkörperphysik, Universität Karlsruhe, 76128 Karlsruhe, Germany

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Issue

Vol. 66, Iss. 1 — 1 July 2002

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