Quantum-well reshaping by hot electrons in planar-doped structures

The self-consistent calculations of the potential well in a planar-doped semiconductor demonstrate that carrier heating in strong electric fields leads not only to a repopulation of the two-dimensional carriers between the subbands but also to a significant deepening and broadening of the quantum well, which is accompanied by a change of the subband energies consequently. The important role of such a change is confirmed by the particularities of the formation of metastable ${\mathrm{DX}}^{-}$ centers in planar-doped GaAs:Si.