Abstract
Deep-level transient spectroscopy studies of electronic defect levels in 7-MeV proton-irradiated n-type float-zone Si with a doping of and oxygen content of have been performed. The thermal stability of the irradiation-induced defects has been investigated for temperatures up to 400 °C. It has been found that annealing of the divacancy-related levels, the singly negative, and the doubly negative, charge states at 220–300 °C results in the formation of a new center with singly negative, and doubly negative, charge states. The new center anneals out at 325–350 °C during isochronal treatment for 15 min. The capture kinetics studies reveal that the electron capture cross section of is larger than that of while the capture cross section of is close to that of The transformation of and into and is very efficient with only a small loss in the peak amplitudes, and the position of the energy levels are close to those of Hence, it is tempting to suggest that the atomic configuration of the X center is closely related to that of and a possible identification of X may be the divacancy-oxygen center
- Received 14 February 2002
DOI:https://doi.org/10.1103/PhysRevB.65.233207
©2002 American Physical Society