Abstract
We predict that a bias-voltage-assisted magnetization reversal process will occur in Mn-doped II-VI semiconductor quantum wells or heterojunctions with carrier-induced ferromagnetism. The effect is due to strong exchange-coupling-induced subband mixing that leads to electrically tunable hysteresis loops. Our model calculations are based on the mean-field theory of carrier-induced ferromagnetism in Mn-doped quantum wells and on a semiphenomenological description of the host II-VI semiconductor valence bands.
- Received 23 January 2002
DOI:https://doi.org/10.1103/PhysRevB.65.193311
©2002 American Physical Society