Abstract
We present a self-consistent calculation of magnetic phase structure in modulation-doped dilute magnetic III-V semiconductor quantum wells. The spin-split subband structure is calculated at finite temperature and magnetic-field effects on the carrier-induced magnetism are examined in a weak-field regime. The exchange correlation of free carriers is shown to enhance the ferromagnetic tendency. And the temperature below which the system spontaneously becomes fully spin polarized, increases as the doping concentration in nonmagnetic barriers increases. Hysteresis loop of the magnetic quantum well predicts that the remnant magnetization is enhanced as one increases the modulation-doped acceptor impurity concentration.
- Received 3 September 2001
DOI:https://doi.org/10.1103/PhysRevB.65.193310
©2002 American Physical Society