Alphabet luminescence lines in 4HSiC

T. A. G. Eberlein, C. J. Fall, R. Jones, P. R. Briddon, and S. Öberg
Phys. Rev. B 65, 184108 – Published 7 May 2002
PDFExport Citation

Abstract

First-principles density functional calculations are used to investigate antisite pairs in 4HSiC. We show that they are likely to be formed in close proximity under ionizing conditions, and they possess a donor level and thermal stability consistent with the series of 40 photoluminescent lines called the alphabet lines. Moreover, the gap vibrational mode of the silicon antisite defect is close to a phonon replica of the b1 line and possesses a weak isotopic shift with 13C in agreement with observation.

  • Received 5 February 2002

DOI:https://doi.org/10.1103/PhysRevB.65.184108

©2002 American Physical Society

Authors & Affiliations

T. A. G. Eberlein, C. J. Fall, and R. Jones

  • School of Physics, University of Exeter, Exeter EX4 4QL, United Kingdom

P. R. Briddon

  • Department of Physics, University of Newcastle upon Tyne, Newcastle upon Tyne NE1 7RU, United Kingdom

S. Öberg

  • Department of Mathematics, University of Luleå, Luleå, S95 187, Sweden

References (Subscription Required)

Click to Expand
Issue

Vol. 65, Iss. 18 — 1 May 2002

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×