Abstract
Influence of disorder in the concentration of magnetic ions on the ferromagnetic phase transition in diluted (III,Mn)V semiconductors is investigated analytically. The regime of small disorder is addressed, and the enhancement of the critical temperature by disorder is found both in the mean-field approximation and from the analysis of the zero-temperature spin stiffness.
- Received 20 September 2001
DOI:https://doi.org/10.1103/PhysRevB.65.165216
©2002 American Physical Society