Abstract
Carrier activation dynamics is measured in self-assembled InAs/GaAs quantum dots with a high degree of electronic state symmetry, at room temperature and following resonant excitation in the ground state. Carriers are activated to the first excited state on a 15-ps time scale in the low-excitation regime, and the total activation rate increases quadratically with the fractional dot occupation. Electron-hole interaction is identified as the dominant mechanism of electron scattering within the lowest confined states of a single quantum dot, circumventing the observation of a phonon bottleneck.
- Received 21 December 2001
DOI:https://doi.org/10.1103/PhysRevB.65.161308
©2002 American Physical Society