Self-consistent simulations of a four-gated vertical quantum dot

Philippe Matagne and Jean-Pierre Leburton
Phys. Rev. B 65, 155311 – Published 27 March 2002
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Abstract

We present three-dimensional (3D) finite-element simulations of symmetric and asymmetric chargings of a four-gated vertical quantum dot (4GVQD) structure. Emphasis is placed on 3D device effects with no a priori assumption about, the shape of the electron confining potential (CP). We show that, by acting asymmetrically on the electric gates, small elliptic deformations in the electron CP are induced with little changes in the addition energy spectrum of the 4GVQD. Charging spin sequences are, however, strongly modified by small deformations, and can therefore be controlled electrostatically by tuning the gates accordingly.

  • Received 28 August 2001

DOI:https://doi.org/10.1103/PhysRevB.65.155311

©2002 American Physical Society

Authors & Affiliations

Philippe Matagne and Jean-Pierre Leburton

  • Beckman Institute for Advanced Science & Technology and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801

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Issue

Vol. 65, Iss. 15 — 15 April 2002

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