Adsorption and reaction of NO on the Si(001) surface

Y. D. Chung, J. W. Kim, C. N. Whang, and H. W. Yeom
Phys. Rev. B 65, 155310 – Published 27 March 2002
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Abstract

The interaction of the nitrous oxide (NO) molecule with the Si(001)2×1 surface at 25–1150 °C was investigated by high-resolution photoemission using synchrotron radiation. N 1s, O 1s, and Si 2p core-level spectra are systematically analyzed. At room temperature, the dissociative adsorption of NO yields two distinct components for both N 1s and O 1s core levels indicating different adsorption species. The major N species is found to be stable up to 850 °C and is assigned to be in the NSi3 configuration. These N adsorbates are thought to incorporate into the surface and subsurface Si layers. The minor adsorbate species both for N and O are unstable for an annealing above 650 °C. The core-level spectra also indicate that a further annealing at ∼950 °C converts parts of the incorporated N into the stoichiometric silicon nitride on the surface while the desorption of oxygen starts already at ∼850 °C. The Si 2p spectra for the NO-dosed surfaces could be decomposed with four oxide- or nitride-related components shifted from the bulk component by 0.8, 1.3, 2.1, and 2.9 eV, respectively. The origin of these components is discussed.

  • Received 2 November 2001

DOI:https://doi.org/10.1103/PhysRevB.65.155310

©2002 American Physical Society

Authors & Affiliations

Y. D. Chung, J. W. Kim, C. N. Whang, and H. W. Yeom*

  • Atomic-scale Surface Science Research Center and Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea

  • *Author to whom correspondence should be addressed. Electronic address: yeom@phya.yonsei.ac.kr

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Issue

Vol. 65, Iss. 15 — 15 April 2002

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