Si-C bonding in films prepared by heterofullerene deposition

We probed the electronic structure of mixed silicon-carbon ${\mathrm{Si}}_x{\mathrm{C}}_{1-x}$ $\mathrm{}(x=0.12\mathrm{})\mathrm{}$ films prepared from free silicon-doped fullerenes (heterofullerenes) deposited on silver thin film. The reactivity towards oxygen is also discussed. X-ray photoemission and Auger spectroscopies suggest that electron transfer from silicon to carbon atom is lower than in tetrahedral SiC compounds. Raman spectroscopy reveals a graphitization of the film associated with the formation of Si-C bonding under strong laser irradiation.