Coupling of gate-induced superconducting polythiophene layers through an insulating part

Jan Hendrik Schön
Phys. Rev. B 65, 052502 – Published 27 December 2001

Abstract

We report on the enhancement of the critical temperature Tc for gate-induced superconductivity in polythiophene thin films using superconductor-insulator-superconductor stacks. The increase of Tc is ascribed to the coupling of the superconducting layers through an insulating barrier. This might be explained by an effective screening of the Coulomb interaction of charge carriers within different layers. Using a combination of superconducting polythiophene and lead layers evidence is found for coupling of charges of the two different layers via phonons.

  • Received 5 October 2001

DOI:https://doi.org/10.1103/PhysRevB.65.052502

©2001 American Physical Society

Authors & Affiliations

Jan Hendrik Schön*

  • Bell Laboratories, Lucent Technologies, Mountain Avenue, Murray Hill, New Jersey 07974
  • Department of Physics, University of Konstanz, D-78457 Konstanz, Germany

  • *E-mail address: hendrik@lucent.com

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Vol. 65, Iss. 5 — 1 February 2002

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