Electronic properties of K-doped single-wall carbon nanotube bundles

Chulsu Jo, Changwook Kim, and Young Hee Lee
Phys. Rev. B 65, 035420 – Published 2 January 2002
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Abstract

We have investigated electronic properties of K-doped single-wall carbon nanotube bundles by the first principles calculations. The lattice expands up to 8% at K0.1C with negative binding energies, where distortion of tube walls is negligible up to K0.25C with full relaxation, contrary to the previous reports. Partial charge transfer occurs from potassium atom to the tube. The Fermi level and the amount of charge transfer increase with increasing doping concentration and saturate at large concentration, strongly indicating that the charge transfer is mainly responsible for conductivity increase of the tubes.

  • Received 15 May 2001

DOI:https://doi.org/10.1103/PhysRevB.65.035420

©2002 American Physical Society

Authors & Affiliations

Chulsu Jo1, Changwook Kim2, and Young Hee Lee1,*

  • 1Department of Physics, Institute of Basic Science, Sungkyunkwan University, Suwon 440-746, Korea
  • 2Department of Chemistry, Korea Advanced Institute of Science and Technology, Yuseong, Taejon, 305-701, Korea

  • *Electronic mail: leeyoung@yurim.skku.ac.kr

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Vol. 65, Iss. 3 — 15 January 2002

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