Directional dependence of the spontaneous emission of Si quantum wires

X. Zianni and A. G. Nassiopoulou
Phys. Rev. B 65, 035326 – Published 2 January 2002
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Abstract

The electron states in silicon quantum wires obtained within an effective approximation are used to study the spontaneous emission rate for direct and phonon-assisted transitions. It is found that light emission from the wires has strong direct character if the wires are directed along the main crystallographic directions or along [110]. The intensity of phonon-assisted transitions is in this case three orders of magnitude smaller.

  • Received 15 February 2001

DOI:https://doi.org/10.1103/PhysRevB.65.035326

©2002 American Physical Society

Authors & Affiliations

X. Zianni and A. G. Nassiopoulou

  • Institute of Microelectronics, NCSR “Demokritos,” 153 10 Aghia Paraskevi, Attiki, Greece

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Vol. 65, Iss. 3 — 15 January 2002

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