• Rapid Communication

Magnetic domains in III-V magnetic semiconductors

T. Dietl, Jürgen König, and A. H. MacDonald
Phys. Rev. B 64, 241201(R) – Published 29 November 2001
PDFExport Citation

Abstract

Recent progress in the theoretical understanding of magnetic anisotropy and stiffness in III-V magnetic semiconductors is exploited for predictions of magnetic domain characteristics and methods of their tuning. We evaluate the width and the energy of domain walls as well as the period of stripe domains in perpendicular films. The computed stripe width W=1.1μm for Ga0.957Mn0.043As/In0.16Ga0.84As compares favorably to the experimental value 1.5μm, as determined by Shono et al. [Appl. Phys. Lett. 77, 1363 (2000)].

  • Received 5 July 2001

DOI:https://doi.org/10.1103/PhysRevB.64.241201

©2001 American Physical Society

Authors & Affiliations

T. Dietl*

  • Institute of Physics and College of Science, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668 Warszawa, Poland

Jürgen König

  • Institut für Theoretische Festkörperphysik, Universität Karlsruhe, D-76128 Karlsruhe, Germany
  • Department of Physics, The University of Texas, Austin, Texas 78712

A. H. MacDonald

  • Department of Physics, The University of Texas, Austin, Texas 78712

  • *Electronic address: dietl@ifpan.edu.pl; URL: http://www.ifpan.edu.pl/SL-2/sl23.html

References (Subscription Required)

Click to Expand
Issue

Vol. 64, Iss. 24 — 15 December 2001

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×