Quantum size and shape effects on the excited states of InxGa1xAs quantum dots

M. Bissiri, G. Baldassarri Höger von Högersthal, M. Capizzi, P. Frigeri, and S. Franchi
Phys. Rev. B 64, 245337 – Published 10 December 2001
PDFExport Citation

Abstract

Resonant photoluminescence and excitation photoluminescence experiments have been carried out at low temperature in a number of (InGa)As/GaAs heterostructures. This has allowed us to investigate the dependence of the excited state energy of self-aggregated quantum dots (QD’s) on shape and size. Experimental results are compared with theoretical estimates of the QD density of states, and agreement and discrepancies with different theoretical approaches are highlighted. Finally, present results support recent reports of a strong In interdiffusion.

  • Received 12 July 2001

DOI:https://doi.org/10.1103/PhysRevB.64.245337

©2001 American Physical Society

Authors & Affiliations

M. Bissiri, G. Baldassarri Höger von Högersthal, and M. Capizzi

  • Istituto Nazionale di Fisica della Materia - Dipartimento di Fisica, Università di Roma “La Sapienza,” Piazzale Aldo Moro 2, I-00185 Roma, Italy

P. Frigeri and S. Franchi

  • CNR-MASPEC, Parco delle Scienze 37a, I-43010 Fontanini, Parma, Italy

References (Subscription Required)

Click to Expand
Issue

Vol. 64, Iss. 24 — 15 December 2001

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×