Scanning tunneling spectroscopy of quantum well and surface states of thin Ag films grown on GaAs(110)

C.-S. Jiang, H.-B. Yu, X.-D. Wang, C.-K. Shih, and Ph. Ebert
Phys. Rev. B 64, 235410 – Published 19 November 2001
PDFExport Citation

Abstract

We investigate the electronic states of thin Ag films grown on GaAs(110) surfaces at low temperatures by scanning tunneling spectroscopy with single-layer thickness resolution. We identify the quantum-well states arising from the z confinement of the two-dimensional Ag films, and find an unoccupied Shockley-type surface state 180±30meV above the Fermi energy. The s-p electronic band dispersion along the Γ-L direction is found to be shifted upward by 190±20meV compared to pure Ag(111) surfaces. This shift, and the fact that the Shockley-type surface state is unoccupied and thus also shifted upward compared to pure Ag(111) surfaces are connected to the lattice strain of the quasiperiodically modulated Ag film. Implications of the results for other Ag thin films are discussed.

  • Received 31 October 2000

DOI:https://doi.org/10.1103/PhysRevB.64.235410

©2001 American Physical Society

Authors & Affiliations

C.-S. Jiang1,2, H.-B. Yu1, X.-D. Wang1, C.-K. Shih1, and Ph. Ebert1,3

  • 1Department of Physics, University of Texas, Austin, Texas 78712
  • 2Department of Physics, University of Tennessee, Knoxville, Tennessee 37996
  • 3Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

References (Subscription Required)

Click to Expand
Issue

Vol. 64, Iss. 23 — 15 December 2001

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×