Fröhlich modes in GaN columnar nanostructures

I. M. Tiginyanu, A. Sarua, G. Irmer, J. Monecke, S. M. Hubbard, D. Pavlidis, and V. Valiaev
Phys. Rev. B 64, 233317 – Published 29 November 2001
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Abstract

GaN columnar nanostructures fabricated by electrochemical dissolution of bulk material have been studied by micro-Raman spectroscopy. The anodization induces an increase in the intensity of Raman scattering accompanied by a breakdown of the polarization selection rules and by the appearance of a new mode at 716cm1, i.e., in the frequency gap between the transverse optical and longitudinal optical bulk phonons. We present a Raman line-shape analysis based on the effective dielectric function of a composite that brings to light the Fröhlich character of this mode.

  • Received 29 May 2001

DOI:https://doi.org/10.1103/PhysRevB.64.233317

©2001 American Physical Society

Authors & Affiliations

I. M. Tiginyanu and A. Sarua

  • Laboratory of Low-Dimensional Semiconductor Structures, Institute of Applied Physics, Technical University of Moldova, 2004 Chisinau, Moldova

G. Irmer and J. Monecke

  • Institut für Theoretische Physik, Technische Universität Bergakademie Freiberg, D-09596 Freiberg, Germany

S. M. Hubbard, D. Pavlidis, and V. Valiaev

  • Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122

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Issue

Vol. 64, Iss. 23 — 15 December 2001

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