Orientationally ordered island growth of higher fullerenes on Ag/Si(111)(3×3)R30°

M. J. Butcher, J. W. Nolan, M. R. C. Hunt, P. H. Beton, L. Dunsch, P. Kuran, P. Georgi, and T. J. S. Dennis
Phys. Rev. B 64, 195401 – Published 12 October 2001
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Abstract

The adsorption of the higher endohedral and empty fullerenes La@C82 and C84 on Ag/Si(111)(3×3)R30° has been investigated using ultrahigh-vacuum scanning tunneling microscopy. At low coverage these molecules form single-layer islands with orientational order, a consequence of the commensurability between the intermolecular separation for each species and the surface lattice constant. The preferred adsorption site for the molecules is above an Ag trimer. Several other domains are observed at higher coverage which may be understood using a simple model. Following annealing, domains with a single orientation remain and the possibilities for epitaxial and heteroepitaxial growth are discussed.

  • Received 1 November 2000

DOI:https://doi.org/10.1103/PhysRevB.64.195401

©2001 American Physical Society

Authors & Affiliations

M. J. Butcher, J. W. Nolan, M. R. C. Hunt, and P. H. Beton

  • School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, United Kingdom

L. Dunsch, P. Kuran, and P. Georgi

  • IFW Dresden, Group of Electrochemistry and Conducting Polymers, D-01171 Dresden, Germany

T. J. S. Dennis

  • Department of Chemistry, Queen Mary and Westfield College, University of London, London E1 4NS, United Kingdom

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Vol. 64, Iss. 19 — 15 November 2001

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