Abstract
We report low-field magnetoresistance measurements of a two-dimensional electron gas formed in a GaAs quantum well, in which half a monolayer of AlAs has been inserted into the center of the well. A large anisotropy is observed in both the mobility and the low field magnetoresistance in the orthogonal and directions. We describe a method of using the anisotropic low field magnetoresistance to calculate the magnitude of the effective potential of the AlAs submonolayer at the GaAs/AlGaAs heterointerface.
- Received 20 July 2001
DOI:https://doi.org/10.1103/PhysRevB.64.165313
©2001 American Physical Society