Charging of embedded InAs self-assembled quantum dots by space-charge techniques

W.-H. Chang, W. Y. Chen, M. C. Cheng, C. Y. Lai, T. M. Hsu, N.-T. Yeh, and J.-I. Chyi
Phys. Rev. B 64, 125315 – Published 10 September 2001
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Abstract

We present the results of both electrical and optical investigations of the charging of InAs self-assembled quantum dots embedded in a space-charge structure. Admittance spectroscopy was employed to study the electronic structures in quantum dots and their electron escape mechanisms. We resolved clear conductance features of different quantum-dot shells, enabling the study of electrons that escaped separately from different shells. Electron-filling modulation reflectance was used to investigate the interband transition influenced by the charging effects. Both the strengths and the energies of the interband transitions were modified in accordance with the electron occupation due to Pauli-blocking and the Coulomb-charging effects. The information acquired from these experimental observations is valuable for feasible device applications.

  • Received 9 March 2001

DOI:https://doi.org/10.1103/PhysRevB.64.125315

©2001 American Physical Society

Authors & Affiliations

W.-H. Chang, W. Y. Chen, M. C. Cheng, C. Y. Lai, and T. M. Hsu*

  • Department of Physics, National Central University, Chung-li, 32054 Taiwan, Republic of China

N.-T. Yeh and J.-I. Chyi

  • Department of Electrical Engineering, National Central University, Chung-li, 32054 Taiwan, Republic of China

  • *Electronic address: tmhsu@phy.ncu.edu.tw

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Issue

Vol. 64, Iss. 12 — 15 September 2001

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