Wigner-function formulation in anisotropic semiconductor quantum wells

Wigner transport equation applicable to the quantum transport in anisotropic semiconductor quantum wells is formulated. Especially, we develop a formulation in which we can use the conventional Wigner transport equation solvers developed assuming isotropic semiconductors for the actual numerical calculation. Using this formulation, transport properties of Si/SiGe resonant-tunneling diodes are analyzed, which shows the characteristics of transverse-longitudinal momentum coupling phenomena via the off-diagonal effective mass tensor elements unique in anisotropic materials.