Abstract
The infrared intersubband optical transitions in SiGe/Si quantum wells is theoretically examined. We have used the and Hamiltonians taking into account both the p-like first conduction band and the s-like second conduction band to calculate wave functions and energy dispersion of the valence band of quantum wells. We discuss intersubband absorption in the valence band and we show that the p-p interaction favors intersubband transitions for an optical polarization parallel to the layer plane polarization). For z polarization, both s-p and p-p interactions play the same footing role in intervalence band transitions.
- Received 22 February 2001
DOI:https://doi.org/10.1103/PhysRevB.64.085329
©2001 American Physical Society