Influence of a magnetic field on an exciton bound to an ionized donor impurity in GaAs/Ga1xAlxAs and CdTe/Cd1xZnxTe semiconductor quantum wells

B. Stébé, I. Essaoudi, A. Ainane, and M. Saber
Phys. Rev. B 64, 085304 – Published 11 July 2001
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Abstract

The influence of an external uniform magnetic field applied along the growth axis on the ground-state energy of an exciton bound to an ionized donor impurity in a semiconductor quantum well with finite potential barriers is investigated. The binding energy of the complex is calculated variationally within the envelope-function approximation as a function of the well width for arbitrary intensity of the field. The results show that the magnetic field enhances the correlation energy of the complex in the cases of GaAs/Ga1xAlxAs and the CdTe/Cd1xZnxTe quantum wells. The influence of the magnetic field and the quantum confinement on the stability against dissociation is also discussed.

  • Received 20 February 2001

DOI:https://doi.org/10.1103/PhysRevB.64.085304

©2001 American Physical Society

Authors & Affiliations

B. Stébé* and I. Essaoudi

  • Université de Metz, Institut de Physique et d’Electronique, 1 Boulevard Arago, 57078 Metz Cedex 3, France

A. Ainane and M. Saber

  • Université Moulay Ismail, Faculté des Sciences, Département de Physique, Boîte Postale 4010, Beni Mhmed, Meknès, Morroco

  • *Email: stebe@ipc.sciences.univ-metz.fr

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Issue

Vol. 64, Iss. 8 — 15 August 2001

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