Low-temperature transport in ac-driven quantum dots in the Kondo regime

We present a fully nonequilibrium calculation of the low-temperature transport properties of a quantum dot in the Kondo regime when an ac potential is applied to the gate. We solve a time-dependent Anderson model with finite on-site Coulomb interaction. The interaction self-energy is calculated up to second order in perturbation theory in the on-site interaction, in the context of the Keldysh nonequilibrium technique, and the effect of the ac voltage is taken into account exactly for all ranges of ac frequencies and ac intensities. The obtained linear conductance and time-averaged density of states of the quantum dot evolve in a nontrivial way as a function of the ac frequency and ac intensity of the harmonic modulation.