Random telegraph noise in the photoluminescence of individual GaxIn1xAs quantum dots in GaAs

N. Panev, M.-E. Pistol, V. Zwiller, L. Samuelson, W. Jiang, B. Xu, and Z. Wang
Phys. Rev. B 64, 045317 – Published 28 June 2001
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Abstract

We have investigated random telegraph noise in the photoluminescence from InGaAs quantum dots in GaAs. Dots switching among two and three levels have been measured. The experiments show that the switching InGaAs dots behave very similarly to switching InP dots in GaInP, but differently from the more commonly investigated colloidal dots. The switching is attributed to defects, and we show that the switching can be used as a monitor of the defect.

  • Received 8 February 2001

DOI:https://doi.org/10.1103/PhysRevB.64.045317

©2001 American Physical Society

Authors & Affiliations

N. Panev, M.-E. Pistol, V. Zwiller, and L. Samuelson

  • Solid State Physics, Box 118, Lund University, S-221 00 Lund, Sweden

W. Jiang, B. Xu, and Z. Wang

  • Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China

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Vol. 64, Iss. 4 — 15 July 2001

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